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Dielectric charging and its effects on device behavior are extensively addressed, as well as the application of different dielectric materials, improvements in the mechanical design and the use of advanced actuation waveforms. This paper presents a comprehensive review of the reliability issues hampering capacitive RF MEMS switches in their development toward commercialization. Finally, stress relaxation structures are believed to decrease the sensitivity to high temperature while keeping a reasonable actuation voltage. However, the required pre-stress range will degrade significantly the actuation voltage.

The influence of tensile pre-stress is also studied since it increases the buckling critical temperature. In particular, a few tens of degrees Celsius are enough to create a deformation that drives the air bridge switch (in ON or OFF position) to fatal failure. We will show in this paper that most of today's switches are sensitive to buckling. This paper focuses, in particular, on the influence of the temperature in metallic RF switches/ Actually, architectures, such as the metallic air bridge, the membrane switch and the dielectric switch, display good RF performances. MEMSCAP and CNES are developing an environmental test bench for the study of RF switch failure modes. As MEMS is a new technology, aging tests and qualification procedures have yet to be demonstrated. But most of the actual applications require high reliability and long lifetimes for their devices. RF switches are believed to replace PIN diodes and MESFETs in numerous future RF applications.

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